R6006KNX Datasheet. Equivalente

 ..1. Size:1568K  1
 r6006knx.pdf

R6006KNX Datasheet Nch 600V 6A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.83 ID 6A PD 40W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing

 ..2. Size:252K  inchange semiconductor
 r6006knx.pdf

isc N-Channel MOSFET Transistor R6006KNX FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 830m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:1525K  1
 r6006knd3.pdf

R6006KND3 Datasheet Nch 600V 6A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 830m ID 6A PD 70W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing

 7.2. Size:266K  inchange semiconductor
 r6006knd3.pdf

isc N-Channel MOSFET Transistor R6006KND3 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 830m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:1484K  1
 r6006jnd3.pdf

R6006JND3 Datasheet Nch 600V 6A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 86W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

 9.2. Size:2249K  1
 r6006jnj.pdf

R6006JNJ Datasheet Nch 600V 6A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 86W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPack

 9.3. Size:2207K  1
 r6006jnx.pdf

R6006JNX Datasheet Nch 600V 6A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 43W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

 9.4. Size:1713K  rohm
 r6006anx.pdf

R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 1.2W ID 6A PD 40W (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating

 9.5. Size:1164K  rohm
 r6006and.pdf

Data Sheet 10V Drive Nch MOSFET R6006AND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide SOA. (1) Gate 0.65 0.9 2.3 (2) Drain (1) (2) (3) 2.3 0.5 4) Drive circuits can be simple. (3) Source 1.0 5) Parallel use is easy. Application Switchi

 9.6. Size:266K  inchange semiconductor
 r6006jnd3.pdf

isc N-Channel MOSFET Transistor R6006JND3 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.7. Size:255K  inchange semiconductor
 r6006jnj.pdf

isc N-Channel MOSFET Transistor R6006JNJ FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.8. Size:252K  inchange semiconductor
 r6006jnx.pdf

isc N-Channel MOSFET Transistor R6006JNX FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose