AO3409L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3409L
   Código: A92T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 6.8 nC
   Tiempo de subida (tr): 3.2 nS
   Conductancia de drenaje-sustrato (Cd): 50.3 pF
   Resistencia entre drenaje y fuente RDS(on): 0.13 Ohm
   Paquete / Cubierta: SOT23

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AO3409L Datasheet (PDF)

..1. Size:100K 1
ao3409 ao3409l.pdf

AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

8.1. Size:234K aosemi
ao3409.pdf

AO340930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3409 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

8.2. Size:434K shenzhen
ao3409.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

8.3. Size:1224K kexin
ao3409.pdf

SMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorAO3409 (KO3409)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -2.6 A (VGS = -10V)1 2RDS(ON)

8.4. Size:1335K kexin
ao3409 ko3409.pdf

SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)

8.5. Size:1335K kexin
ao3409-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)

8.6. Size:1622K umw-ic
ao3409a.pdf