AO3409L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO3409L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 50.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de AO3409L MOSFET
AO3409L datasheet
ao3409 ao3409l.pdf
AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)
ao3409.pdf
AO3409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
ao3409.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409 AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)
ao3409.pdf
SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -2.6 A (VGS = -10V) 1 2 RDS(ON)
Otros transistores... SSW7N60B , STE40NA60 , STE36N50A , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AON6380 , FTP23N10A , HY3003P , HY3003B , IPD70R900P7S , MDE1991RH , NCEP1520K , RJK6035DPP-E0 , STK0160 .
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