AO3409L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3409L
Marking Code: A92T
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.8
nC
trⓘ - Rise Time: 3.2
nS
Cossⓘ -
Output Capacitance: 50.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
SOT23
AO3409L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3409L
Datasheet (PDF)
..1. Size:100K 1
ao3409 ao3409l.pdf 
AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)
8.1. Size:234K aosemi
ao3409.pdf
AO340930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3409 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
8.2. Size:434K shenzhen
ao3409.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)
8.3. Size:1224K kexin
ao3409.pdf
SMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorAO3409 (KO3409)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -2.6 A (VGS = -10V)1 2RDS(ON)
8.4. Size:1335K kexin
ao3409 ko3409.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
8.5. Size:1335K kexin
ao3409-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
8.6. Size:1622K umw-ic
ao3409a.pdf
RUMWUMW AO3409AUMW AO3409AFeaturesSOT23 VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
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