IPD70R900P7S Todos los transistores

 

IPD70R900P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD70R900P7S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.7 nS
   Cossⓘ - Capacitancia de salida: 5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de IPD70R900P7S MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPD70R900P7S Datasheet (PDF)

 ..1. Size:1202K  1
 ipd70r900p7s.pdf pdf_icon

IPD70R900P7S

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 ..2. Size:1202K  infineon
 ipd70r900p7s.pdf pdf_icon

IPD70R900P7S

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 7.1. Size:1320K  infineon
 ipi70r950ce ipd70r950ce ips70r950ce.pdf pdf_icon

IPD70R900P7S

IPI70R950CE, IPD70R950CE, IPS70R950CEMOSFETIPAK DPAK IPAK SL700V CoolMOS CE Power Transistortabtab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplicati

 7.2. Size:242K  inchange semiconductor
 ipd70r950ce.pdf pdf_icon

IPD70R900P7S

isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

MOSTRAR MÁS

Otros transistores... STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P , HY3003B , IRFP250 , MDE1991RH , NCEP1520K , RJK6035DPP-E0 , STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , APT20M18LVFR .

History: SSP60R140SFD | WMN15N65C4

 

 
Back to Top

 


 
.