IPD70R900P7S PDF and Equivalents Search

 

IPD70R900P7S Specs and Replacement

Type Designator: IPD70R900P7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.7 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

IPD70R900P7S substitution

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IPD70R900P7S datasheet

 ..1. Size:1202K  1
ipd70r900p7s.pdf pdf_icon

IPD70R900P7S

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

 ..2. Size:1202K  infineon
ipd70r900p7s.pdf pdf_icon

IPD70R900P7S

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

 7.1. Size:1320K  infineon
ipi70r950ce ipd70r950ce ips70r950ce.pdf pdf_icon

IPD70R900P7S

IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I PAK DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati... See More ⇒

 7.2. Size:242K  inchange semiconductor
ipd70r950ce.pdf pdf_icon

IPD70R900P7S

isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

Detailed specifications: STE38NB50, STE38NB50F, STE24NA100, STE15NA100, AO3409L, FTP23N10A, HY3003P, HY3003B, AON7506, MDE1991RH, NCEP1520K, RJK6035DPP-E0, STK0160, 23N50, APT10M09LVFR, APT20M16LFLL, APT20M18LVFR

Keywords - IPD70R900P7S MOSFET specs

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