RJK6035DPP-E0 Todos los transistores

 

RJK6035DPP-E0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK6035DPP-E0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 29.5 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 3 V
   Carga de la puerta (Qg): 20 nC
   Tiempo de subida (tr): 4.6 nS
   Conductancia de drenaje-sustrato (Cd): 78 pF
   Resistencia entre drenaje y fuente RDS(on): 1.37 Ohm
   Paquete / Cubierta: TO220F

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RJK6035DPP-E0 Datasheet (PDF)

 ..1. Size:81K  1
rjk6035dpp-e0.pdf

RJK6035DPP-E0
RJK6035DPP-E0

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100600V - 6A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S

 8.1. Size:61K  renesas
rjk6036dp3-a0.pdf

RJK6035DPP-E0
RJK6035DPP-E0

Preliminary DatasheetRJK6036DP3-A0 R07DS0841EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSP0004ZB-APackage name: SOT-223D41. Gate2. DrainG3 3. Source24.

 8.2. Size:76K  renesas
r07ds0553ej rjk6034dpd.pdf

RJK6035DPP-E0
RJK6035DPP-E0

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100600 V - 1 A - MOS FET Rev.1.00High Speed Power Switching Oct 13, 2011Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-AD(Package name : TO-252)41. Gate2. DrainG3. Source

 8.3. Size:90K  renesas
rjk6032dph-e0.pdf

RJK6035DPP-E0
RJK6035DPP-E0

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100600V - 3A - MOS FET Rev.1.00High Speed Power Switching Jan 23, 2013Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4.

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