RJK6035DPP-E0 PDF and Equivalents Search

 

RJK6035DPP-E0 Specs and Replacement

Type Designator: RJK6035DPP-E0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.37 Ohm

Package: TO220F

RJK6035DPP-E0 substitution

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RJK6035DPP-E0 datasheet

 ..1. Size:81K  1
 rjk6035dpp-e0.pdf pdf_icon

RJK6035DPP-E0

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100 600V - 6A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S... See More ⇒

 8.1. Size:61K  renesas
 rjk6036dp3-a0.pdf pdf_icon

RJK6035DPP-E0

Preliminary Datasheet RJK6036DP3-A0 R07DS0841EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSP0004ZB-A Package name SOT-223 D 4 1. Gate 2. Drain G 3 3. Source 2 4.... See More ⇒

 8.2. Size:76K  renesas
 r07ds0553ej rjk6034dpd.pdf pdf_icon

RJK6035DPP-E0

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100 600 V - 1 A - MOS FET Rev.1.00 High Speed Power Switching Oct 13, 2011 Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-A D (Package name TO-252) 4 1. Gate 2. Drain G 3. Source... See More ⇒

 8.3. Size:90K  renesas
 rjk6032dph-e0.pdf pdf_icon

RJK6035DPP-E0

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100 600V - 3A - MOS FET Rev.1.00 High Speed Power Switching Jan 23, 2013 Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. ... See More ⇒

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Detailed specifications: STE15NA100, AO3409L, FTP23N10A, HY3003P, HY3003B, IPD70R900P7S, MDE1991RH, NCEP1520K, TK10A60D, STK0160, 23N50, APT10M09LVFR, APT20M16LFLL, APT20M18LVFR, APT20M18LVR, APT20M20LFLL, APT30M30B2FLL

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