APT10M09LVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10M09LVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 3940 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO264
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APT10M09LVFR datasheet
apt10m09lvfr.pdf
isc N-Channel MOSFET Transistor APT10M09LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.009 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
apt10m09lvfrg.pdf
APT10M09B2VFR APT10M09LVFR 100V 100A 0.009 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layou
apt10m09b2vr.pdf
APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati
apt10m09b2vfr.pdf
APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical
Otros transistores... HY3003P , HY3003B , IPD70R900P7S , MDE1991RH , NCEP1520K , RJK6035DPP-E0 , STK0160 , 23N50 , 4N60 , APT20M16LFLL , APT20M18LVFR , APT20M18LVR , APT20M20LFLL , APT30M30B2FLL , APT30M36B2FLL , APT30M36LFLL , APT30M36LLL .
History: PNM3FD201E0 | 3090K | PHD55N03LTA | JCS4N60FB | WMM120P06TS | 3N70L-TN3-R | SPB80N06S2-05
History: PNM3FD201E0 | 3090K | PHD55N03LTA | JCS4N60FB | WMM120P06TS | 3N70L-TN3-R | SPB80N06S2-05
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