APT10M09LVFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT10M09LVFR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 625 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 350 nC
Время нарастания (tr): 36 ns
Выходная емкость (Cd): 3940 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm
Тип корпуса: TO264
Аналог (замена) для APT10M09LVFR
APT10M09LVFR Datasheet (PDF)
apt10m09lvfr.pdf
isc N-Channel MOSFET Transistor APT10M09LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt10m09lvfrg.pdf
APT10M09B2VFRAPT10M09LVFR100V 100A 0.009B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layou
apt10m09b2vr.pdf
APT10M09B2VRAPT10M09LVR100V 100A 0.009WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt10m09b2vfr.pdf
APT10M09B2VFRAPT10M09LVFR100V 100A 0.009WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
apt10m09b2vfr.pdf
isc N-Channel MOSFET Transistor APT10M09B2VFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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