APT4014BVFR Todos los transistores

 

APT4014BVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT4014BVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-247
 

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APT4014BVFR Datasheet (PDF)

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apt4014bvfr.pdf pdf_icon

APT4014BVFR

isc N-Channel MOSFET Transistor APT4014BVFRFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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apt4014bvfrg apt4014svfrg.pdf pdf_icon

APT4014BVFR

APT4014BVFRAPT4014SVFR400V 28A 0.140BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 5.1. Size:64K  apt
apt4014bvr.pdf pdf_icon

APT4014BVFR

APT4014BVR400V 28A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.1. Size:64K  apt
apt4014hvr.pdf pdf_icon

APT4014BVFR

APT4014HVR400V 28A 0.140POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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History: KNH3725A | IRLR8256 | STF8N65M5 | JCS8N60S | 2SK2751 | IRFH8318TRPBF

 

 
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