APT4014BVFR - аналоги, параметры транзистора - Справочник транзисторов

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isc N-Channel MOSFET Transistor APT4014BVFR FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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APT4014BVFR APT4014SVFR 400V 28A 0.140 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

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APT4014BVR 400V 28A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

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APT4014HVR 400V 28A 0.140 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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