APT5015BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5015BVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT5015BVFR MOSFET
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APT5015BVFR datasheet
apt5015bvfr.pdf
isc N-Channel MOSFET Transistor APT5015BVFR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt5015bvfrg.pdf
APT5015BVFR APT5015SVFR 500V 32A 0.150 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.
apt5015bvr.pdf
APT5015BVR 500V 32A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower
apt5015bvr.pdf
isc N-Channel MOSFET Transistor APT5015BVR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
Otros transistores... APT30M36LLL , APT30M61BFLL , APT30M75BFLL , APT4014BVFR , APT4020BVFR , APT47N65BC3 , APT5010LFLL , APT5010LLL , 8N60 , APT50M75LFLL , APT50M80LVFR , APT6010B2FLL , APT6010LFLL , APT6013LFLL , APT6015B2VFR , APT6017LFLL , APT60N60BCS .
History: SI3134KDW | YWNM6001 | WSF40N10A | SI1016X | SWU16N70K
History: SI3134KDW | YWNM6001 | WSF40N10A | SI1016X | SWU16N70K
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