R6024KNJ Todos los transistores

 ..1. Size:1948K  rohm
 r6024knj.pdf

R6024KNJ Datasheet Nch 600V 24A Power MOSFET lOutline l TO-263 VDSS 600V SC-83 RDS(on)(Max.) 0.165 LPT(S) ID 24A PD 245W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packing

 ..2. Size:255K  inchange semiconductor
 r6024knj.pdf

isc N-Channel MOSFET Transistor R6024KNJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 165m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:1234K  rohm
 r6024knz.pdf

R6024KNZ Datasheet Nch 600V 24A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.165 TO-3PF ID 24A PD 74W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp

 7.2. Size:1614K  rohm
 r6024knx.pdf

R6024KNX Datasheet Nch 600V 24A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.165 TO-220FM ID 24A PD 74W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 7.3. Size:2160K  rohm
 r6024knz1.pdf

R6024KNZ1 Datasheet Nch 600V 24A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.165 TO-247 ID 24A PD 245W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant . lPackaging specifications l Packing Tube Reel size (mm) -

 7.4. Size:265K  inchange semiconductor
 r6024knz.pdf

isc N-Channel MOSFET Transistor R6024KNZ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 165m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.5. Size:252K  inchange semiconductor
 r6024knx.pdf

isc N-Channel MOSFET Transistor R6024KNX FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 165m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.6. Size:377K  inchange semiconductor
 r6024knz1.pdf

isc N-Channel MOSFET Transistor R6024KNZ1 FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 165m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp