Справочник MOSFET. R6024KNJ

 

R6024KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6024KNJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 45 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для R6024KNJ

 

 

R6024KNJ Datasheet (PDF)

 ..1. Size:1948K  rohm
 r6024knj.pdf

R6024KNJ R6024KNJ

R6024KNJDatasheetNch 600V 24A Power MOSFETlOutlinel TO-263VDSS600V SC-83RDS(on)(Max.)0.165 LPT(S)ID24APD245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packing

 ..2. Size:255K  inchange semiconductor
 r6024knj.pdf

R6024KNJ R6024KNJ

isc N-Channel MOSFET Transistor R6024KNJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1234K  rohm
 r6024knz.pdf

R6024KNJ R6024KNJ

R6024KNZDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-3PFID24APD 74W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

 7.2. Size:1614K  rohm
 r6024knx.pdf

R6024KNJ R6024KNJ

R6024KNXDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 7.3. Size:2160K  rohm
 r6024knz1.pdf

R6024KNJ R6024KNJ

R6024KNZ1DatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-247ID24APD 245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliant.lPackaging specificationsl Packing Tube Reel size (mm) -

 7.4. Size:265K  inchange semiconductor
 r6024knz.pdf

R6024KNJ R6024KNJ

isc N-Channel MOSFET Transistor R6024KNZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.5. Size:252K  inchange semiconductor
 r6024knx.pdf

R6024KNJ R6024KNJ

isc N-Channel MOSFET Transistor R6024KNXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.6. Size:377K  inchange semiconductor
 r6024knz1.pdf

R6024KNJ R6024KNJ

isc N-Channel MOSFET Transistor R6024KNZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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