R6504KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6504KNJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 58 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 10 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 270 pF
   Resistencia entre drenaje y fuente RDS(on): 1.05 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET R6504KNJ

R6504KNJ Datasheet (PDF)

..1. Size:1376K rohm
r6504knj.pdf

R6504KNJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

..2. Size:255K inchange semiconductor
r6504knj.pdf

isc N-Channel MOSFET Transistor R6504KNJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.1. Size:1372K rohm
r6504knx.pdf

R6504KNXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

7.2. Size:252K inchange semiconductor
r6504knx.pdf

isc N-Channel MOSFET Transistor R6504KNXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:1370K rohm
r6504enx.pdf

R6504ENXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu

9.2. Size:1373K rohm
r6504enj.pdf

R6504ENJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embo

9.3. Size:251K inchange semiconductor
r6504enx.pdf

isc N-Channel MOSFET Transistor R6504ENXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.4. Size:255K inchange semiconductor
r6504enj.pdf

isc N-Channel MOSFET Transistor R6504ENJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: