Справочник MOSFET. R6504KNJ

 

R6504KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6504KNJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 58 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для R6504KNJ

 

 

R6504KNJ Datasheet (PDF)

 ..1. Size:1376K  rohm
r6504knj.pdf

R6504KNJ
R6504KNJ

R6504KNJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

 ..2. Size:255K  inchange semiconductor
r6504knj.pdf

R6504KNJ
R6504KNJ

isc N-Channel MOSFET Transistor R6504KNJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:1372K  rohm
r6504knx.pdf

R6504KNJ
R6504KNJ

R6504KNXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 7.2. Size:252K  inchange semiconductor
r6504knx.pdf

R6504KNJ
R6504KNJ

isc N-Channel MOSFET Transistor R6504KNXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:1370K  rohm
r6504enx.pdf

R6504KNJ
R6504KNJ

R6504ENXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu

 9.2. Size:1373K  rohm
r6504enj.pdf

R6504KNJ
R6504KNJ

R6504ENJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embo

 9.3. Size:251K  inchange semiconductor
r6504enx.pdf

R6504KNJ
R6504KNJ

isc N-Channel MOSFET Transistor R6504ENXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.4. Size:255K  inchange semiconductor
r6504enj.pdf

R6504KNJ
R6504KNJ

isc N-Channel MOSFET Transistor R6504ENJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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