R6504KNJ - описание и поиск аналогов

R6504KNJ Datasheet Nch 650V 4A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 58W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

isc N-Channel MOSFET Transistor R6504KNJ FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

R6504KNX Datasheet Nch 650V 4A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 40W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pack

isc N-Channel MOSFET Transistor R6504KNX FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

R6504ENX Datasheet Nch 650V 4A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 40W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bu

R6504ENJ Datasheet Nch 650V 4A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 58W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Embo

isc N-Channel MOSFET Transistor R6504ENX FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6504ENJ FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp