R6504KNX Todos los transistores

 ..1. Size:1372K  rohm
 r6504knx.pdf

R6504KNX Datasheet Nch 650V 4A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 40W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pack

 ..2. Size:252K  inchange semiconductor
 r6504knx.pdf

isc N-Channel MOSFET Transistor R6504KNX FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 7.1. Size:1376K  rohm
 r6504knj.pdf

R6504KNJ Datasheet Nch 650V 4A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 58W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

 7.2. Size:255K  inchange semiconductor
 r6504knj.pdf

isc N-Channel MOSFET Transistor R6504KNJ FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:1370K  rohm
 r6504enx.pdf

R6504ENX Datasheet Nch 650V 4A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 40W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bu

 9.2. Size:1373K  rohm
 r6504enj.pdf

R6504ENJ Datasheet Nch 650V 4A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 1.050 ID 4.0A PD 58W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Embo

 9.3. Size:251K  inchange semiconductor
 r6504enx.pdf

isc N-Channel MOSFET Transistor R6504ENX FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.4. Size:255K  inchange semiconductor
 r6504enj.pdf

isc N-Channel MOSFET Transistor R6504ENJ FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 1.05 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp