R6511ENJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6511ENJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 124 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET R6511ENJ

R6511ENJ Datasheet (PDF)

..1. Size:1380K rohm
r6511enj.pdf

R6511ENJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.4ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embos

..2. Size:254K inchange semiconductor
r6511enj.pdf

isc N-Channel MOSFET Transistor R6511ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.1. Size:1381K rohm
r6511enx.pdf

R6511ENXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.4ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk

7.2. Size:251K inchange semiconductor
r6511enx.pdf

isc N-Channel MOSFET Transistor R6511ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:1365K rohm
r6511knj.pdf

R6511KNJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.40ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

9.2. Size:1397K rohm
r6511knx.pdf

R6511KNXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.40ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching applic

9.3. Size:255K inchange semiconductor
r6511knj.pdf

isc N-Channel MOSFET Transistor R6511KNJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.4. Size:252K inchange semiconductor
r6511knx.pdf

isc N-Channel MOSFET Transistor R6511KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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