R6511KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1365K rohm
r6511knj.pdf pdf_icon

R6511KNJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.40ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

..2. Size:255K inchange semiconductor
r6511knj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6511KNJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.1. Size:1397K rohm
r6511knx.pdf pdf_icon

R6511KNXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.40ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching applic

7.2. Size:252K inchange semiconductor
r6511knx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6511KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:1381K rohm
r6511enx.pdf pdf_icon

R6511ENXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.4ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk

9.2. Size:1380K rohm
r6511enj.pdf pdf_icon

R6511ENJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.4ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embos

9.3. Size:251K inchange semiconductor
r6511enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6511ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.4. Size:254K inchange semiconductor
r6511enj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6511ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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