R6511KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6511KNJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 124 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 710 pF
Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET R6511KNJ
R6511KNJ Datasheet (PDF)
r6511knj.pdf
R6511KNJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.40ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6511knj.pdf
isc N-Channel MOSFET Transistor R6511KNJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511knx.pdf
R6511KNXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.40ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching applic
r6511knx.pdf
isc N-Channel MOSFET Transistor R6511KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511enx.pdf
R6511ENXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.4ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6511enj.pdf
R6511ENJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.4ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embos
r6511enx.pdf
isc N-Channel MOSFET Transistor R6511ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511enj.pdf
isc N-Channel MOSFET Transistor R6511ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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