R6511KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6511KNJ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 124 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 710 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
Тип корпуса: TO-263
R6511KNJ Datasheet (PDF)
r6511knj.pdf
R6511KNJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.40ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6511knj.pdf
isc N-Channel MOSFET Transistor R6511KNJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511knx.pdf
R6511KNXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.40ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching applic
r6511knx.pdf
isc N-Channel MOSFET Transistor R6511KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511enx.pdf
R6511ENXDatasheetNch 650V 11A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.4ID 11APD 53W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6511enj.pdf
R6511ENJDatasheetNch 650V 11A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.4ID 11APD 124W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embos
r6511enx.pdf
isc N-Channel MOSFET Transistor R6511ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6511enj.pdf
isc N-Channel MOSFET Transistor R6511ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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