R6515ENJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6515ENJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 184 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 55 nS
Conductancia de drenaje-sustrato (Cd): 1050 pF
Resistencia entre drenaje y fuente RDS(on): 0.315 Ohm
Paquete / Cubierta: TO-263
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R6515ENJ Datasheet (PDF)
r6515enj.pdf
R6515ENJDatasheetNch 650V 15A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.315ID 15APD 184W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb
r6515enj.pdf
isc N-Channel MOSFET Transistor R6515ENJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515enx.pdf
R6515ENXDatasheetNch 650V 15A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu
r6515enz.pdf
R6515ENZDatasheetNch 650V 15A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube
r6515enx.pdf
isc N-Channel MOSFET Transistor R6515ENXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515enz.pdf
isc N-Channel MOSFET Transistor R6515ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
