R6515ENJ Todos los transistores

 ..1. Size:1381K  rohm
 r6515enj.pdf

R6515ENJ Datasheet Nch 650V 15A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.315 ID 15A PD 184W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emb

 ..2. Size:254K  inchange semiconductor
 r6515enj.pdf

isc N-Channel MOSFET Transistor R6515ENJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:1419K  rohm
 r6515enx.pdf

R6515ENX Datasheet Nch 650V 15A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.315 ID 15A PD 60W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bu

 7.2. Size:2557K  rohm
 r6515enz.pdf

R6515ENZ Datasheet Nch 650V 15A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.315 ID 15A PD 60W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube

 7.3. Size:251K  inchange semiconductor
 r6515enx.pdf

isc N-Channel MOSFET Transistor R6515ENX FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.4. Size:265K  inchange semiconductor
 r6515enz.pdf

isc N-Channel MOSFET Transistor R6515ENZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 315m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo