R6515ENJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6515ENJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 184 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.315 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET R6515ENJ

R6515ENJ Datasheet (PDF)

..1. Size:1381K rohm
r6515enj.pdf

R6515ENJDatasheetNch 650V 15A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.315ID 15APD 184W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb

..2. Size:254K inchange semiconductor
r6515enj.pdf

isc N-Channel MOSFET Transistor R6515ENJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.1. Size:1419K rohm
r6515enx.pdf

R6515ENXDatasheetNch 650V 15A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu

7.2. Size:2557K rohm
r6515enz.pdf

R6515ENZDatasheetNch 650V 15A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube

7.3. Size:251K inchange semiconductor
r6515enx.pdf

isc N-Channel MOSFET Transistor R6515ENXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.4. Size:265K inchange semiconductor
r6515enz.pdf

isc N-Channel MOSFET Transistor R6515ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: