R6515KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6515KNJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 184 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 27.5 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 980 pF
Resistencia entre drenaje y fuente RDS(on): 0.315 Ohm
Paquete / Cubierta: TO-263
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R6515KNJ Datasheet (PDF)
r6515knj.pdf
R6515KNJDatasheetNch 650V 15A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.315ID 15APD 184W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi
r6515knj.pdf
isc N-Channel MOSFET Transistor R6515KNJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515knx.pdf
R6515KNXDatasheetNch 650V 15A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.315 TO-220FMID15APD 60W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
r6515knz.pdf
R6515KNZDatasheetNch 650V 15A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6515knx.pdf
isc N-Channel MOSFET Transistor R6515KNXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515knz.pdf
isc N-Channel MOSFET Transistor R6515KNZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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