R6515KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6515KNJ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 184 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 27.5 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 980 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.315 Ohm
Тип корпуса: TO-263
R6515KNJ Datasheet (PDF)
r6515knj.pdf
R6515KNJDatasheetNch 650V 15A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.315ID 15APD 184W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi
r6515knj.pdf
isc N-Channel MOSFET Transistor R6515KNJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515knx.pdf
R6515KNXDatasheetNch 650V 15A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.315 TO-220FMID15APD 60W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
r6515knz.pdf
R6515KNZDatasheetNch 650V 15A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.315ID 15APD 60W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6515knx.pdf
isc N-Channel MOSFET Transistor R6515KNXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6515knz.pdf
isc N-Channel MOSFET Transistor R6515KNZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 315m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
