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R6524ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R6524ENZ1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 245 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 1850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO-247
 

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R6524ENZ1 Datasheet (PDF)

 ..1. Size:2033K  rohm
r6524enz1.pdf pdf_icon

R6524ENZ1

R6524ENZ1DatasheetNch 650V 24A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6524ENZ1 Basic ordering unit (

 ..2. Size:377K  inchange semiconductor
r6524enz1.pdf pdf_icon

R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:2137K  rohm
r6524enz.pdf pdf_icon

R6524ENZ1

R6524ENZDatasheetNch 650V 24A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.185ID 24APD 74W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube

 6.2. Size:265K  inchange semiconductor
r6524enz.pdf pdf_icon

R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... R6520KNJ , R6520KNX , R6520KNX1 , R6520KNZ , R6520KNZ1 , R6524ENJ , R6524ENX , R6524ENZ , TK10A60D , R6524KNJ , R6524KNX , R6524KNX1 , R6524KNZ , R6530ENX , R6530ENZ , R6530ENZ1 , R6530KNX .

History: FDB9503L-F085 | SCT20N120 | HSL0107 | NCEP040N85GU | IRF7341 | 2SK2869-ZJ | HSM0204

 

 
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