Справочник MOSFET. R6524ENZ1

 

R6524ENZ1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6524ENZ1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 1850 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.185 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для R6524ENZ1

 

 

R6524ENZ1 Datasheet (PDF)

 ..1. Size:2033K  rohm
 r6524enz1.pdf

R6524ENZ1 R6524ENZ1

R6524ENZ1DatasheetNch 650V 24A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6524ENZ1 Basic ordering unit (

 ..2. Size:377K  inchange semiconductor
 r6524enz1.pdf

R6524ENZ1 R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:2137K  rohm
 r6524enz.pdf

R6524ENZ1 R6524ENZ1

R6524ENZDatasheetNch 650V 24A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.185ID 24APD 74W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube

 6.2. Size:265K  inchange semiconductor
 r6524enz.pdf

R6524ENZ1 R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1852K  rohm
 r6524enx.pdf

R6524ENZ1 R6524ENZ1

R6524ENXDatasheetNch 650V 24A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.185 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw

 7.2. Size:1377K  rohm
 r6524enj.pdf

R6524ENZ1 R6524ENZ1

R6524ENJDatasheetNch 650V 24A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb

 7.3. Size:252K  inchange semiconductor
 r6524enx.pdf

R6524ENZ1 R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.4. Size:255K  inchange semiconductor
 r6524enj.pdf

R6524ENZ1 R6524ENZ1

isc N-Channel MOSFET Transistor R6524ENJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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