R6524KNX Todos los transistores

 

R6524KNX MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6524KNX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm

Encapsulados: TO-220F

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R6524KNX datasheet

 ..1. Size:1849K  rohm
r6524knx.pdf pdf_icon

R6524KNX

R6524KNX Datasheet Nch 650V 24A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.185 TO-220FM ID 24A PD 74W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

 ..2. Size:252K  inchange semiconductor
r6524knx.pdf pdf_icon

R6524KNX

isc N-Channel MOSFET Transistor R6524KNX FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.1. Size:2229K  rohm
r6524knx1.pdf pdf_icon

R6524KNX

R6524KNX1 Datasheet Nch 650V 24A Power MOSFET lOutline l TO-220AB VDSS 650V RDS(on)(Max.) 0.185 ID 24A PD 253W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pa

 0.2. Size:261K  inchange semiconductor
r6524knx1.pdf pdf_icon

R6524KNX

isc N-Channel MOSFET Transistor R6524KNX1 FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 185m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... R6520KNX1 , R6520KNZ , R6520KNZ1 , R6524ENJ , R6524ENX , R6524ENZ , R6524ENZ1 , R6524KNJ , 12N60 , R6524KNX1 , R6524KNZ , R6530ENX , R6530ENZ , R6530ENZ1 , R6530KNX , R6530KNX1 , R6530KNZ .

 

 

 


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