R6535ENZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6535ENZ1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 379 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 2800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET R6535ENZ1

R6535ENZ1 Datasheet (PDF)

..1. Size:1700K rohm
r6535enz1.pdf

R6535ENZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tu

..2. Size:303K inchange semiconductor
r6535enz1.pdf

isc N-Channel MOSFET Transistor R6535ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:2458K rohm
r6535enz.pdf

R6535ENZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tub

6.2. Size:265K inchange semiconductor
r6535enz.pdf

isc N-Channel MOSFET Transistor R6535ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:1723K rohm
r6535knz1.pdf

R6535KNZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

9.2. Size:3547K rohm
r6535knz.pdf

R6535KNZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

9.3. Size:303K inchange semiconductor
r6535knz1.pdf

isc N-Channel MOSFET Transistor R6535KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.4. Size:265K inchange semiconductor
r6535knz.pdf

isc N-Channel MOSFET Transistor R6535KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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