R6535KNZ1 Todos los transistores

 

R6535KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6535KNZ1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 379 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 72 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 2500 pF

Resistencia drenaje-fuente RDS(on): 0.115 Ohm

Empaquetado / Estuche: TO-247

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R6535KNZ1 Datasheet (PDF)

0.1. r6535knz1.pdf Size:1723K _rohm

R6535KNZ1
R6535KNZ1

R6535KNZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

0.2. r6535knz1.pdf Size:303K _inchange_semiconductor

R6535KNZ1
R6535KNZ1

isc N-Channel MOSFET Transistor R6535KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. r6535knz.pdf Size:3547K _rohm

R6535KNZ1
R6535KNZ1

R6535KNZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

6.2. r6535knz.pdf Size:265K _inchange_semiconductor

R6535KNZ1
R6535KNZ1

isc N-Channel MOSFET Transistor R6535KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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