R6535KNZ1 Datasheet. Equivalente

 ..1. Size:1723K  rohm
 r6535knz1.pdf

R6535KNZ1 Datasheet Nch 650V 35A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.115 ID 35A PD 379W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pack

 ..2. Size:303K  inchange semiconductor
 r6535knz1.pdf

isc N-Channel MOSFET Transistor R6535KNZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:3547K  rohm
 r6535knz.pdf

R6535KNZ Datasheet Nch 650V 35A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.115 ID 35A PD 102W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

 6.2. Size:265K  inchange semiconductor
 r6535knz.pdf

isc N-Channel MOSFET Transistor R6535KNZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:1700K  rohm
 r6535enz1.pdf

R6535ENZ1 Datasheet Nch 650V 35A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.115 ID 35A PD 379W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tu

 9.2. Size:2458K  rohm
 r6535enz.pdf

R6535ENZ Datasheet Nch 650V 35A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.115 ID 35A PD 102W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tub

 9.3. Size:303K  inchange semiconductor
 r6535enz1.pdf

isc N-Channel MOSFET Transistor R6535ENZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.4. Size:265K  inchange semiconductor
 r6535enz.pdf

isc N-Channel MOSFET Transistor R6535ENZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo