R6535KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1723K rohm
r6535knz1.pdf pdf_icon

R6535KNZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

..2. Size:303K inchange semiconductor
r6535knz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6535KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:3547K rohm
r6535knz.pdf pdf_icon

R6535KNZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

6.2. Size:265K inchange semiconductor
r6535knz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6535KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:1700K rohm
r6535enz1.pdf pdf_icon

R6535ENZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tu

9.2. Size:2458K rohm
r6535enz.pdf pdf_icon

R6535ENZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tub

9.3. Size:303K inchange semiconductor
r6535enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6535ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.4. Size:265K inchange semiconductor
r6535enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6535ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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