Справочник MOSFET. R6535KNZ1

 

R6535KNZ1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6535KNZ1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 379 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 72 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 2500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для R6535KNZ1

 

 

R6535KNZ1 Datasheet (PDF)

 ..1. Size:1723K  rohm
 r6535knz1.pdf

R6535KNZ1 R6535KNZ1

R6535KNZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 ..2. Size:303K  inchange semiconductor
 r6535knz1.pdf

R6535KNZ1 R6535KNZ1

isc N-Channel MOSFET Transistor R6535KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:3547K  rohm
 r6535knz.pdf

R6535KNZ1 R6535KNZ1

R6535KNZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

 6.2. Size:265K  inchange semiconductor
 r6535knz.pdf

R6535KNZ1 R6535KNZ1

isc N-Channel MOSFET Transistor R6535KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:1700K  rohm
 r6535enz1.pdf

R6535KNZ1 R6535KNZ1

R6535ENZ1DatasheetNch 650V 35A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.115ID 35APD 379W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tu

 9.2. Size:2458K  rohm
 r6535enz.pdf

R6535KNZ1 R6535KNZ1

R6535ENZDatasheetNch 650V 35A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.115ID 35APD 102W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tub

 9.3. Size:303K  inchange semiconductor
 r6535enz1.pdf

R6535KNZ1 R6535KNZ1

isc N-Channel MOSFET Transistor R6535ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.4. Size:265K  inchange semiconductor
 r6535enz.pdf

R6535KNZ1 R6535KNZ1

isc N-Channel MOSFET Transistor R6535ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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