R8008ANJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R8008ANJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 195 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.03 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de R8008ANJ MOSFET
R8008ANJ PDF Specs
r8008anj.pdf
R8008ANJ Datasheet Nch 800V 8A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 1.03 LPT(S) ID 8A PD 195W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-... See More ⇒
r8008anj.pdf
isc N-Channel MOSFET Transistor R8008ANJ FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
r8008anx.pdf
Data Sheet 10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒
r8008anx.pdf
isc N-Channel MOSFET Transistor R8008ANX FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
Otros transistores... R6530KNZ , R6530KNZ1 , R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , R8005ANJ , IRF1407 , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 , R6547ENZ1 .
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