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R8008ANJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R8008ANJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.03 Ohm
   Paquete / Cubierta: TO-263
 

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R8008ANJ PDF Specs

 ..1. Size:1750K  rohm
r8008anj.pdf pdf_icon

R8008ANJ

R8008ANJ Datasheet Nch 800V 8A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 1.03 LPT(S) ID 8A PD 195W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-... See More ⇒

 ..2. Size:255K  inchange semiconductor
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R8008ANJ

isc N-Channel MOSFET Transistor R8008ANJ FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 7.1. Size:1169K  rohm
r8008anx.pdf pdf_icon

R8008ANJ

Data Sheet 10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 7.2. Size:252K  inchange semiconductor
r8008anx.pdf pdf_icon

R8008ANJ

isc N-Channel MOSFET Transistor R8008ANX FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 1.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

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