R8008ANJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R8008ANJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 195 W
Tensión drenaje-fuente |Vds|: 800 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 5 V
Carga de compuerta (Qg): 38 nC
Tiempo de elevación (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 500 pF
Resistencia drenaje-fuente RDS(on): 1.03 Ohm
Empaquetado / Estuche: TO-263
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R8008ANJ Datasheet (PDF)
0.1. r8008anj.pdf 
Size:1750K _rohm
R8008ANJDatasheetNch 800V 8A Power MOSFETlOutlinel TO-263SVDSS 800V SC-83RDS(on)(Max.) 1.03 LPT(S)ID 8APD 195W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteedto be 30V.4) Drive circuits can be simple.5) Parallel use is easy.6) Pb-
0.2. r8008anj.pdf Size:255K _inchange_semiconductor
isc N-Channel MOSFET Transistor R8008ANJFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
7.1. r8008anx.pdf Size:1169K _rohm
Data Sheet10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD. (1) Gate(2) Drain2.54 2.54 0.75 2.6(1) (2) (3)(3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType
7.2. r8008anx.pdf Size:252K _inchange_semiconductor
isc N-Channel MOSFET Transistor R8008ANXFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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