R6020KNZ4 Todos los transistores

 

R6020KNZ4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6020KNZ4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 231 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 1350 pF

Resistencia drenaje-fuente RDS(on): 0.196 Ohm

Empaquetado / Estuche: TO247

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R6020KNZ4 Datasheet (PDF)

0.1. r6020knz4.pdf Size:1355K _rohm

R6020KNZ4
R6020KNZ4

R6020KNZ4DatasheetNch 600V 20A Power MOSFETlOutlinel TO-247VDSS 600VRDS(on)(Max.) 0.196ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free lead plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

6.1. r6020knz.pdf Size:2192K _rohm

R6020KNZ4
R6020KNZ4

R6020KNZDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-3PFID20APD 68W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

6.2. r6020knz1.pdf Size:2176K _rohm

R6020KNZ4
R6020KNZ4

R6020KNZ1DatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-247ID20APD 231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA

 6.3. r6020knz.pdf Size:265K _inchange_semiconductor

R6020KNZ4
R6020KNZ4

isc N-Channel MOSFET Transistor R6020KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

6.4. r6020knz1.pdf Size:377K _inchange_semiconductor

R6020KNZ4
R6020KNZ4

isc N-Channel MOSFET Transistor R6020KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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