R6020KNZ4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6020KNZ4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 231 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 5 V
Carga de compuerta (Qg): 40 nC
Tiempo de elevación (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 1350 pF
Resistencia drenaje-fuente RDS(on): 0.196 Ohm
Empaquetado / Estuche: TO247
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R6020KNZ4 Datasheet (PDF)
0.1. r6020knz4.pdf 
Size:1355K _rohm
R6020KNZ4DatasheetNch 600V 20A Power MOSFETlOutlinel TO-247VDSS 600VRDS(on)(Max.) 0.196ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free lead plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi
6.1. r6020knz.pdf Size:2192K _rohm
R6020KNZDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-3PFID20APD 68W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp
6.2. r6020knz1.pdf Size:2176K _rohm
R6020KNZ1DatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-247ID20APD 231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
6.3. r6020knz.pdf Size:265K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6020KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
6.4. r6020knz1.pdf Size:377K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6020KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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