R6547KNZ1 Todos los transistores

 

R6547KNZ1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R6547KNZ1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 480 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 47 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 95 nC
   Tiempo de subida (tr): 120 nS
   Conductancia de drenaje-sustrato (Cd): 4000 pF
   Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
   Paquete / Cubierta: TO-247

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R6547KNZ1 Datasheet (PDF)

 ..1. Size:2038K  rohm
r6547knz1.pdf

R6547KNZ1 R6547KNZ1

R6547KNZ1Nch 650V 47A Power MOSFETDatasheetlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547KNZ1 Basic ordering unit (

 ..2. Size:304K  inchange semiconductor
r6547knz1.pdf

R6547KNZ1 R6547KNZ1

isc N-Channel MOSFET Transistor R6547KNZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:2055K  rohm
r6547enz1.pdf

R6547KNZ1 R6547KNZ1

R6547ENZ1DatasheetNch 650V 47A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.080ID 47APD 480WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6547ENZ1 Basic ordering unit (

 9.2. Size:303K  inchange semiconductor
r6547enz1.pdf

R6547KNZ1 R6547KNZ1

isc N-Channel MOSFET Transistor R6547ENZ1FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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