RD3H045SP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RD3H045SP datasheet

..1. Size:1617K rohm
rd3h045sp.pdf pdf_icon

RD3H045SP Datasheet Pch -45V -4.5A Power MOSFET lOutline l VDSS -45V DPAK RDS(on)(Max.) 155m TO-252 ID 4.5A PD 15W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l

..2. Size:265K inchange semiconductor
rd3h045sp.pdf pdf_icon

isc P-Channel MOSFET Transistor RD3H045SP FEATURES Drain Current I = -4.5A@ T =25 D C Drain Source Voltage- V = -45V(Min) DSS Static Drain-Source On-Resistance R = 155m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

9.1. Size:1606K rohm
rd3h080sp.pdf pdf_icon

RD3H080SP Datasheet Pch -45V -8A Power MOSFET lOutline l VDSS -45V DPAK RDS(on)(Max.) 91m TO-252 ID 8A PD 15W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embos

9.2. Size:266K inchange semiconductor
rd3h080sp.pdf pdf_icon

isc P-Channel MOSFET Transistor RD3H080SP FEATURES Drain Current I = -8A@ T =25 D C Drain Source Voltage- V = -45V(Min) DSS Static Drain-Source On-Resistance R = 91m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... R6047MNZ1 , R6547ENZ1 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN , RD3G500GN , RD3G600GN , P60NF06 , RD3H080SP , RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , RD3L140SP , RD3L150SN .