RD3H080SP Todos los transistores

 

RD3H080SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RD3H080SP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm
   Paquete / Cubierta: TO-252
 

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RD3H080SP Datasheet (PDF)

 ..1. Size:1606K  rohm
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RD3H080SP

RD3H080SPDatasheetPch -45V -8A Power MOSFETlOutlinelVDSS-45V DPAKRDS(on)(Max.)91m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos

 ..2. Size:266K  inchange semiconductor
 rd3h080sp.pdf pdf_icon

RD3H080SP

isc P-Channel MOSFET Transistor RD3H080SPFEATURESDrain Current I = -8A@ T =25D CDrain Source Voltage-: V = -45V(Min)DSSStatic Drain-Source On-Resistance: R = 91m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:1617K  rohm
 rd3h045sp.pdf pdf_icon

RD3H080SP

RD3H045SPDatasheetPch -45V -4.5A Power MOSFETlOutlinelVDSS-45V DPAKRDS(on)(Max.)155m TO-252ID4.5APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 9.2. Size:265K  inchange semiconductor
 rd3h045sp.pdf pdf_icon

RD3H080SP

isc P-Channel MOSFET Transistor RD3H045SPFEATURESDrain Current I = -4.5A@ T =25D CDrain Source Voltage-: V = -45V(Min)DSSStatic Drain-Source On-Resistance: R = 155m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

MOSTRAR MÁS

Otros transistores... R6547ENZ1 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN , RD3G500GN , RD3G600GN , RD3H045SP , K2611 , RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , RD3L140SP , RD3L150SN , RD3L220SN .

History: RU1H40L | CHM2316GP

 

 
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