RD3H080SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RD3H080SP Datasheet (PDF)

..1. Size:1606K rohm
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RD3H080SPDatasheetPch -45V -8A Power MOSFETlOutlinelVDSS-45V DPAKRDS(on)(Max.)91m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos

..2. Size:266K inchange semiconductor
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isc P-Channel MOSFET Transistor RD3H080SPFEATURESDrain Current I = -8A@ T =25D CDrain Source Voltage-: V = -45V(Min)DSSStatic Drain-Source On-Resistance: R = 91m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:1617K rohm
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RD3H045SPDatasheetPch -45V -4.5A Power MOSFETlOutlinelVDSS-45V DPAKRDS(on)(Max.)155m TO-252ID4.5APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

9.2. Size:265K inchange semiconductor
rd3h045sp.pdf pdf_icon

isc P-Channel MOSFET Transistor RD3H045SPFEATURESDrain Current I = -4.5A@ T =25D CDrain Source Voltage-: V = -45V(Min)DSSStatic Drain-Source On-Resistance: R = 155m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Otros transistores... R6547ENZ1 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN , RD3G500GN , RD3G600GN , RD3H045SP , IRF520 , RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , RD3L140SP , RD3L150SN , RD3L220SN .