RD3L140SP Todos los transistores

 

RD3L140SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RD3L140SP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.084 Ohm
   Paquete / Cubierta: TO-252
 

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RD3L140SP Datasheet (PDF)

 ..1. Size:1593K  rohm
 rd3l140sp.pdf pdf_icon

RD3L140SP

RD3L140SPDatasheetPch -60V -14A Power MOSFETlOutlinelVDSS-60V DPAKRDS(on)(Max.)84m TO-252ID14APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb

 ..2. Size:265K  inchange semiconductor
 rd3l140sp.pdf pdf_icon

RD3L140SP

isc P-Channel MOSFET Transistor RD3L140SPFEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 84m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.1. Size:1617K  rohm
 rd3l150sn.pdf pdf_icon

RD3L140SP

RD3L150SN DatasheetNch 60V 15A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)40m TO-252ID15APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbosse

 9.2. Size:265K  inchange semiconductor
 rd3l150sn.pdf pdf_icon

RD3L140SP

isc N-Channel MOSFET Transistor RD3L150SNFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

MOSTRAR MÁS

Otros transistores... RD3G600GN , RD3H045SP , RD3H080SP , RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , 60N06 , RD3L150SN , RD3L220SN , RD3P050SN , RD3P100SN , RD3P130SP , RD3P175SN , RD3P200SN , RD3S075CN .

History: HMS21N65A

 

 
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