RD3P175SN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RD3P175SN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET RD3P175SN

RD3P175SN Datasheet (PDF)

..1. Size:1590K rohm
rd3p175sn.pdf

RD3P175SNDatasheetNch 100V 17.5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)105m TO-252ID17.5APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

..2. Size:265K inchange semiconductor
rd3p175sn.pdf

isc N-Channel MOSFET Transistor RD3P175SNFEATURESDrain Current I = 17.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.1. Size:1640K rohm
rd3p130sp.pdf

RD3P130SPDatasheetPch -100V -13A Power MOSFETlOutlinelVDSS-100V DPAKRDS(on)(Max.)200m TO-252ID13APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

9.2. Size:1587K rohm
rd3p100sn.pdf

RD3P100SNDatasheetNch 100V 10A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)133m TO-252ID10APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb

9.3. Size:265K inchange semiconductor
rd3p130sp.pdf

isc P-Channel MOSFET Transistor RD3P130SPFEATURESDrain Current I = -13A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 200m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.4. Size:265K inchange semiconductor
rd3p100sn.pdf

isc N-Channel MOSFET Transistor RD3P100SNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 133m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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