RD3P175SN PDF and Equivalents Search

 ..1. Size:1590K  rohm
 rd3p175sn.pdf

RD3P175SN Datasheet Nch 100V 17.5A Power MOSFET lOutline l VDSS 100V DPAK RDS(on)(Max.) 105m TO-252 ID 17.5A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l ... See More ⇒

 ..2. Size:265K  inchange semiconductor
 rd3p175sn.pdf

isc N-Channel MOSFET Transistor RD3P175SN FEATURES Drain Current I = 17.5A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

 9.1. Size:1640K  rohm
 rd3p130sp.pdf

RD3P130SP Datasheet Pch -100V -13A Power MOSFET lOutline l VDSS -100V DPAK RDS(on)(Max.) 200m TO-252 ID 13A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l ... See More ⇒

 9.2. Size:1587K  rohm
 rd3p100sn.pdf

RD3P100SN Datasheet Nch 100V 10A Power MOSFET lOutline l VDSS 100V DPAK RDS(on)(Max.) 133m TO-252 ID 10A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Emb... See More ⇒

 9.3. Size:265K  inchange semiconductor
 rd3p130sp.pdf

isc P-Channel MOSFET Transistor RD3P130SP FEATURES Drain Current I = -13A@ T =25 D C Drain Source Voltage- V = -100V(Min) DSS Static Drain-Source On-Resistance R = 200m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

 9.4. Size:265K  inchange semiconductor
 rd3p100sn.pdf

isc N-Channel MOSFET Transistor RD3P100SN FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 133m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒