RD3U080CN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RD3U080CN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-252

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RD3U080CN Datasheet (PDF)

..1. Size:1498K rohm
rd3u080cn.pdf

RD3U080CNDatasheetNch 250V 8A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 300m TO-252ID 8APD 85W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTa

..2. Size:265K inchange semiconductor
rd3u080cn.pdf

isc N-Channel MOSFET Transistor RD3U080CNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 300m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:1490K rohm
rd3u040cn.pdf

RD3U040CNDatasheetNch 250V 4A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 1300m TO-252ID 4APD 29W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Pack

9.2. Size:1502K rohm
rd3u060cn.pdf

RD3U060CNDatasheetNch 250V 6A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 530m TO-252ID 6APD 52W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Packi

9.3. Size:265K inchange semiconductor
rd3u040cn.pdf

isc N-Channel MOSFET Transistor RD3U040CNFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.4. Size:265K inchange semiconductor
rd3u060cn.pdf

isc N-Channel MOSFET Transistor RD3U060CNFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 530m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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