Справочник MOSFET. RD3U080CN

 

RD3U080CN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RD3U080CN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для RD3U080CN

 

 

RD3U080CN Datasheet (PDF)

 ..1. Size:1498K  rohm
 rd3u080cn.pdf

RD3U080CN RD3U080CN

RD3U080CNDatasheetNch 250V 8A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 300m TO-252ID 8APD 85W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTa

 ..2. Size:265K  inchange semiconductor
 rd3u080cn.pdf

RD3U080CN RD3U080CN

isc N-Channel MOSFET Transistor RD3U080CNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 300m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:1490K  rohm
 rd3u040cn.pdf

RD3U080CN RD3U080CN

RD3U040CNDatasheetNch 250V 4A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 1300m TO-252ID 4APD 29W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Pack

 9.2. Size:1502K  rohm
 rd3u060cn.pdf

RD3U080CN RD3U080CN

RD3U060CNDatasheetNch 250V 6A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 530m TO-252ID 6APD 52W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Packi

 9.3. Size:265K  inchange semiconductor
 rd3u040cn.pdf

RD3U080CN RD3U080CN

isc N-Channel MOSFET Transistor RD3U040CNFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.4. Size:265K  inchange semiconductor
 rd3u060cn.pdf

RD3U080CN RD3U080CN

isc N-Channel MOSFET Transistor RD3U060CNFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 530m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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