NCE7580 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE7580
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 11.8 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de NCE7580 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE7580 datasheet
..1. Size:427K 1
nce7580.pdf 
NCE7580 http //www.ncepower.com Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio
..2. Size:460K ncepower
nce7580.pdf
NCE7580 http //www.ncepower.com Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio
9.1. Size:1082K ncepower
nce75ed65vt4.pdf
NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7
9.2. Size:473K ncepower
nce75ts120vtp.pdf
PbFreeProduct NCE75TS120VTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
9.3. Size:688K ncepower
nce75h25t.pdf
http //www.ncepower.com NCE75H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H25T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 75V,I =250A DS D R
9.4. Size:799K ncepower
nce75ed75vt.pdf
NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75
9.5. Size:1129K ncepower
nce75ed65vt.pdf
NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75
9.6. Size:1533K ncepower
nce75td120wt.pdf
Pb Free Product NCE75TD120WT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.7. Size:361K ncepower
nce75h21t.pdf
Pb Free Product http //www.ncepower.com NCE75H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.8. Size:393K ncepower
nce75h21.pdf
http //www.ncepower.com NCE75H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.9. Size:1233K ncepower
nce75ed120vtp.pdf
NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC
9.10. Size:1131K ncepower
nce75ed120vt4.pdf
NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC
9.11. Size:752K ncepower
nce75ed75vt4.pdf
NCE75ED75VT4 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 7
9.12. Size:1219K ncepower
nce75ed120vt.pdf
NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =
9.13. Size:800K ncepower
nce75ed65bt.pdf
NCE75ED65BT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 75
9.14. Size:1502K ncepower
nce75td120btp4.pdf
Pb Free Product NCE75TD120BTP4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.15. Size:650K ncepower
nce75h25.pdf
http //www.ncepower.com NCE75H25 NCE N-Channel Enhancement Mode Power MOSFET (Primary) Description The NCE75H25 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 75V,I =250A DS D R
9.16. Size:796K ncepower
nce75eu65ut.pdf
NCE75EU65UT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 75
9.17. Size:1549K ncepower
nce75td120ww.pdf
Pb Free Product NCE75TD120WW 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.18. Size:469K ncepower
nce75td120vtp.pdf
PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
9.19. Size:1144K ncepower
nce75ed120vtp4.pdf
NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC
9.21. Size:1512K ncepower
nce75td120wt4.pdf
Pb Free Product NCE75TD120WT4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.22. Size:1513K ncepower
nce75td120btp.pdf
Pb Free Product NCE75TD120BTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.23. Size:1529K ncepower
nce75td120bt4.pdf
Pb Free Product NCE75TD120BT4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.24. Size:1863K ncepower
nce75td120bt.pdf
Pb Free Product NCE75TD120BT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
9.25. Size:1142K ncepower
nce75ed65vtp.pdf
NCE75ED65VTP 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7
9.26. Size:293K ncepower
nce75h21d.pdf
http //www.ncepower.com NCE75H21D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.27. Size:338K ncepower
nce75h35tc.pdf
Pb Free Product http //www.ncepower.com NCE75H35TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON)
9.29. Size:463K ncepower
nce75td120vt.pdf
PbFreeProduct NCE75TD120VT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
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