NCE7580 PDF and Equivalents Search

 ..1. Size:427K  1
 nce7580.pdf

NCE7580 http //www.ncepower.com Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio... See More ⇒

 ..2. Size:460K  ncepower
 nce7580.pdf

NCE7580 http //www.ncepower.com Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio... See More ⇒

 9.1. Size:1082K  ncepower
 nce75ed65vt4.pdf

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 9.2. Size:473K  ncepower
 nce75ts120vtp.pdf

PbFreeProduct NCE75TS120VTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s... See More ⇒

 9.3. Size:688K  ncepower
 nce75h25t.pdf

http //www.ncepower.com NCE75H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H25T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 75V,I =250A DS D R ... See More ⇒

 9.4. Size:799K  ncepower
 nce75ed75vt.pdf

NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75... See More ⇒

 9.5. Size:1129K  ncepower
 nce75ed65vt.pdf

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒

 9.6. Size:1533K  ncepower
 nce75td120wt.pdf

Pb Free Product NCE75TD120WT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.7. Size:361K  ncepower
 nce75h21t.pdf

Pb Free Product http //www.ncepower.com NCE75H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON) ... See More ⇒

 9.8. Size:393K  ncepower
 nce75h21.pdf

http //www.ncepower.com NCE75H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON) ... See More ⇒

 9.9. Size:1233K  ncepower
 nce75ed120vtp.pdf

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.10. Size:1131K  ncepower
 nce75ed120vt4.pdf

NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.11. Size:752K  ncepower
 nce75ed75vt4.pdf

NCE75ED75VT4 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 7... See More ⇒

 9.12. Size:1219K  ncepower
 nce75ed120vt.pdf

NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 9.13. Size:800K  ncepower
 nce75ed65bt.pdf

NCE75ED65BT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 75... See More ⇒

 9.14. Size:1502K  ncepower
 nce75td120btp4.pdf

Pb Free Product NCE75TD120BTP4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching... See More ⇒

 9.15. Size:650K  ncepower
 nce75h25.pdf

http //www.ncepower.com NCE75H25 NCE N-Channel Enhancement Mode Power MOSFET (Primary) Description The NCE75H25 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 75V,I =250A DS D R ... See More ⇒

 9.16. Size:796K  ncepower
 nce75eu65ut.pdf

NCE75EU65UT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 75... See More ⇒

 9.17. Size:1549K  ncepower
 nce75td120ww.pdf

Pb Free Product NCE75TD120WW 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.18. Size:469K  ncepower
 nce75td120vtp.pdf

PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s... See More ⇒

 9.19. Size:1144K  ncepower
 nce75ed120vtp4.pdf

NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC... See More ⇒

 9.20. Size:1261K  ncepower
 nce75t120vt.pdf

... See More ⇒

 9.21. Size:1512K  ncepower
 nce75td120wt4.pdf

Pb Free Product NCE75TD120WT4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.22. Size:1513K  ncepower
 nce75td120btp.pdf

Pb Free Product NCE75TD120BTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.23. Size:1529K  ncepower
 nce75td120bt4.pdf

Pb Free Product NCE75TD120BT4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.24. Size:1863K  ncepower
 nce75td120bt.pdf

Pb Free Product NCE75TD120BT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

 9.25. Size:1142K  ncepower
 nce75ed65vtp.pdf

NCE75ED65VTP 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 9.26. Size:293K  ncepower
 nce75h21d.pdf

http //www.ncepower.com NCE75H21D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON) ... See More ⇒

 9.27. Size:338K  ncepower
 nce75h35tc.pdf

Pb Free Product http //www.ncepower.com NCE75H35TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON) ... See More ⇒

 9.28. Size:478K  ncepower
 nce7560k.pdf

... See More ⇒

 9.29. Size:463K  ncepower
 nce75td120vt.pdf

PbFreeProduct NCE75TD120VT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒