AP050N03Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP050N03Q
   Código: 050N03Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 38.4 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 2660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: DFN3.3X3.3

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AP050N03Q Datasheet (PDF)

..1. Size:2248K 1
ap050n03q.pdf

..2. Size:2248K allpower
ap050n03q.pdf

9.1. Size:142K ape
ap0504gmt.pdf

AP0504GMT-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDescriptionDAP0504 series are from Advanced Power inno

9.2. Size:94K ape
ap0504gmt-hf.pdf

AP0504GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

9.3. Size:93K ape
ap0504gh-hf.pdf

AP0504GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 6.3m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

9.4. Size:94K ape
ap0503gmt-hf.pdf

AP0503GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 70AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

9.5. Size:959K cn vbsemi
ap0504gmt.pdf

AP0504GMTwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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