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AP050N03Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP050N03Q
   Маркировка: 050N03Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38.4 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 2660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: DFN3.3X3.3

 Аналог (замена) для AP050N03Q

 

 

AP050N03Q Datasheet (PDF)

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AP050N03Q AP050N03Q

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 ap050n03q.pdf

AP050N03Q AP050N03Q

 9.1. Size:142K  ape
 ap0504gmt.pdf

AP050N03Q AP050N03Q

AP0504GMT-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDescriptionDAP0504 series are from Advanced Power inno

 9.2. Size:94K  ape
 ap0504gmt-hf.pdf

AP050N03Q AP050N03Q

AP0504GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 9.3. Size:93K  ape
 ap0504gh-hf.pdf

AP050N03Q AP050N03Q

AP0504GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 6.3m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 9.4. Size:94K  ape
 ap0503gmt-hf.pdf

AP050N03Q AP050N03Q

AP0503GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 70AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 9.5. Size:959K  cn vbsemi
 ap0504gmt.pdf

AP050N03Q AP050N03Q

AP0504GMTwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA

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