AP120N03K Todos los transistores

 

AP120N03K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP120N03K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 86 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO252

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AP120N03K datasheet

 ..1. Size:1631K  allpower
ap120n03k.pdf pdf_icon

AP120N03K

 6.1. Size:578K  allpower
ap120n03.pdf pdf_icon

AP120N03K

 6.2. Size:1444K  cn apm
ap120n03nf.pdf pdf_icon

AP120N03K

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

 6.3. Size:1481K  cn apm
ap120n03d.pdf pdf_icon

AP120N03K

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

Otros transistores... FL6L52010L , MDU2653 , NCE7580 , AP040N03G , AP045N03M , AP050N03Q , AP0903Q , AP10N10K , IRFP460 , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , AP2302B .

History: LSH60R290HF | TK31A60W | PSMN7R5-30MLD

 

 

 


History: LSH60R290HF | TK31A60W | PSMN7R5-30MLD

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