AP2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2312
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20(max) nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0318 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de AP2312 MOSFET
AP2312 Datasheet (PDF)
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ap2312ai.pdf
AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR
ap2312mi.pdf
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Otros transistores... AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S , 10N60 , AP2N7002 , AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S .
History: BLL6H1214L-250
History: BLL6H1214L-250
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