AP2312 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2312 datasheet

..1. Size:1137K allpower
ap2312.pdf pdf_icon

0.1. Size:68K ape
ap2312gn.pdf pdf_icon

AP2312GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50m D Surface mount package ID 4.3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

0.2. Size:1228K cn apm
ap2312ai.pdf pdf_icon

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

0.3. Size:1302K cn apm
ap2312mi.pdf pdf_icon

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

Otros transistores... AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S , 10N60 , AP2N7002 , AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S .