All MOSFET. AP2312 Datasheet

 

AP2312 Datasheet and Replacement


   Type Designator: AP2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20(max) nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm
   Package: SOT23
 

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AP2312 Datasheet (PDF)

 ..1. Size:1137K  allpower
ap2312.pdf pdf_icon

AP2312

 0.1. Size:68K  ape
ap2312gn.pdf pdf_icon

AP2312

AP2312GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50mD Surface mount package ID 4.3ASSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

 0.2. Size:1228K  cn apm
ap2312ai.pdf pdf_icon

AP2312

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

 0.3. Size:1302K  cn apm
ap2312mi.pdf pdf_icon

AP2312

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

Datasheet: AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S , 10N60 , AP2N7002 , AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S .

History: HM50N20D | AP30H100KA | 2SK1745

Keywords - AP2312 MOSFET datasheet

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