AP2312 MOSFET Datasheet: N-Ch, 20V, 5A. Full specification with pinout and replacement list

AP2312 Specs and Replacement

Type Designator: AP2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 max nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm

Package: SOT23

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AP2312 datasheet

..1. Size:1137K allpower
ap2312.pdf pdf_icon

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0.1. Size:68K ape
ap2312gn.pdf pdf_icon

AP2312GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50m D Surface mount package ID 4.3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o... See More ⇒

0.2. Size:1228K cn apm
ap2312ai.pdf pdf_icon

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R ... See More ⇒

0.3. Size:1302K cn apm
ap2312mi.pdf pdf_icon

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R ... See More ⇒

Detailed specifications: AP2045K, AP2080K, AP2300, AP2301, AP2302, AP2302B, AP2305, AP2310S, 10N60, AP2N7002, AP3010, AP3020, AP30H100KA, AP30H150KA, AP30P30Q, AP3400, AP3400S

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