AP3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3407
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP3407
AP3407 Datasheet (PDF)
ap3407s.pdf
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AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)
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ap3405gh-hf.pdf
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AP3405GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -8.6AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO
ap3400s.pdf
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AIIP ERAP3400S DATA SHEET N-Channel pwer MOSFETI Descriptions N MOS N- CHA NNEL MOSFET in a SOT23 Plastic Package. SOT23 oI Features V s(V) = 30V oA lo = 5.8 (VGs = 10V) s 2Ro coN)
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