All MOSFET. AP3407 Datasheet

 

AP3407 Datasheet and Replacement


   Type Designator: AP3407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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AP3407 Datasheet (PDF)

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AP3407

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AP3407

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

 9.1. Size:72K  ape
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AP3407

AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest poss

 9.2. Size:62K  ape
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AP3407

AP3402GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 35VD Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device de

Datasheet: AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 , 2N7000 , AP3407S , AP4435 , AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 .

History: SE2303 | WMB60P02TS

Keywords - AP3407 MOSFET datasheet

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