AP83T03K Todos los transistores

 

AP83T03K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP83T03K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 86 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO252

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AP83T03K datasheet

 ..1. Size:1488K  allpower
ap83t03k.pdf pdf_icon

AP83T03K

AIIP ER AP83T03K DATA SHEET N-Channel Power MOSFET T l."W On-resistance D BVoss 30V Jimple Drive Requirement 6m0 T Fast Switching Characteristic lo 75A G R HS c mpliant & Halogen-Free T Descripti n AP83T03K series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance T0-252 fast switchin

 7.1. Size:70K  ape
ap83t03gh-hf ap83t03gj-hf.pdf pdf_icon

AP83T03K

AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP83T03 series are from Advanced Power innovated design and silicon G D process technology to achieve the l

 7.2. Size:56K  ape
ap83t03agh-hf.pdf pdf_icon

AP83T03K

AP83T03AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 66A G RoHS Compliant & Halogen-Free S Description AP83T03A series are from Advanced Power innovated design and G D silicon process technology to achieve the

 7.3. Size:99K  ape
ap83t03gh j-hf.pdf pdf_icon

AP83T03K

AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S

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