Справочник MOSFET. AP83T03K

 

AP83T03K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP83T03K
   Маркировка: 83T03GJ_83T03GH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 21 nC
   trⓘ - Время нарастания: 86 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP83T03K

 

 

AP83T03K Datasheet (PDF)

 ..1. Size:1488K  allpower
ap83t03k.pdf

AP83T03K
AP83T03K

AIIP ERAP83T03K DATA SHEET N-Channel Power MOSFETT l."W On-resistance D BVoss 30V Jimple Drive Requirement 6m0 T Fast Switching Characteristic lo 75A G RHS cmpliant & Halogen-Free T DescriptinAP83T03K series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance T0-252fast switchin

 7.1. Size:70K  ape
ap83t03gh-hf ap83t03gj-hf.pdf

AP83T03K
AP83T03K

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the l

 7.2. Size:56K  ape
ap83t03agh-hf.pdf

AP83T03K
AP83T03K

AP83T03AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03A series are from Advanced Power innovated design andGDsilicon process technology to achieve the

 7.3. Size:99K  ape
ap83t03gh j-hf.pdf

AP83T03K
AP83T03K

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

 7.4. Size:166K  ape
ap83t03gj.pdf

AP83T03K
AP83T03K

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the l

 7.5. Size:118K  ape
ap83t03gm-hf.pdf

AP83T03K
AP83T03K

AP83T03GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP83T03 series are from Advanced Power innovated design andsilicon process technolo

 7.6. Size:58K  ape
ap83t03gmt-hf.pdf

AP83T03K
AP83T03K

AP83T03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 6m Low On-resistance ID 72AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggediz

 7.7. Size:57K  ape
ap83t03agmt-hf.pdf

AP83T03K
AP83T03K

AP83T03AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 6m Low On-resistance ID 71AG RoHS Compliant & Halogen-FreeS DDDDescriptionDAP83T03A series are from Advanced Power innovated design and siliconprocess technology to achieve

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